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This resulted in a lowered operate operate along with the formation of a Schottky Speak to in between the BrGO and n-form Si substrate. Resulting from the higher proportion of B-C and B-C3 bonding in the BrGO/Si gadget than that within the rGO/Si, the diminished Schottky barrier top of the BrGO/n-Si vertical junction photodetector resulted in a hig